MOCVD growth of GaN-based high electron mobility transistor structures
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منابع مشابه
Growth and fabrication of AlGaN/GaN HEMT based on Si(1 1 1) substrates by MOCVD
AlGaN/GaN high electron mobility transistor (HEMT) hetero-structures were grown on the 2-in Si (1 1 1) substrate using metalorganic chemical vapor deposition (MOCVD). Low-temperature (LT) AlN layers were inserted to relieve the tension stress during the growth of GaN epilayers. The grown AlGaN/GaN HEMT samples exhibited a maximum crack-free area of 8mm 5mm, XRD GaN (0 0 0 2) full-width at half-...
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The inherent advantages of the hot-wall metal organic chemical vapor deposition (MOCVD reactor (low temperature gradients, less bowing of the wafer during growth, efficient precursor cracking) compared to a cold-wall reactor make it easier to obtain uniform growth. However, arcing may occur in the growth chamber during growth, which deteriorates the properties of the grown material. By insertin...
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